1N4935G Ver la hoja de datos (PDF) - Diode Semiconductor Korea

Número de pieza

componentes Descripción

Fabricante

1N4935G

GLASS PASSIVATED JUNCTION

Diode Semiconductor Korea 

Diode Semiconductor Korea

1N4933G - - -1N4937G

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50

N.1.

(+)

50VDC

(APPROX)

(-)

D.U.T.

1

N.1.

10

N.1.

OSCILLOSCOPE

(NOTE 1)

(-)

PULSE

GENERATOR

(NOTE2)

(+)

NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M . 22PF

2.RISETIME=10ns MAX. SOURCEIMPEDANCE=50

trr

+0.5A

0

-0.25A

-1.0A

SETTIMEBASEFOR50/100 ns /cm

FIG.2 --FORWARD CURRENT DERATING CURVE

FIG.3 --PEAK FORWARD SURGE CURRENT

1.0

Single Phase

Half Wave 50HZ

0.8

Resistive or

Inductive Load

0.6

0.4

0.2

0

0

25

50

75

100 125

150 175

LEAD TEMPERATURE,

FIG.4--TYPICAL FORWARD CHARACTERISTIC

20

10

1.0

TJ=25

PULSE WIDTH=300 s

0.1

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

30

24

TJ=25

8.3ms Single Half

18

Sine-Wave

12

6

0

12

46

10

20

40 60 100

NUMBER OF CYCLES AT 60 Hz

FIG.4--TYPICAL JUNCTION CAPACITANCE

20

16

14

12

10

4

TJ=25

f=1MHz

2

1

.1 .2 .4

1.0 2 4

10 20 40

100

FORWARD VOLTAGE,VOLTS

REVERSE VOLTAGE,VOLTS

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