2N5771 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N5771 Datasheet PDF : 2 Pages
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2N5771/FTSO5771
ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CHARACTERISTIC
VcEfsall
Collector to Emitter Saturation
Voltage (Note 5)
WIN MAX
-0.18
-0.15
-0.6
UNITS
V
V
V
TEST CONDITIONS
Ic = 10mA, IB = 1.0mA
Ic = 1.0 rnA, IB = 0.1 mA
Ic = 50 mA, la = 5.0 mA
VeEum)
Base to Emitter Saturation
Voltage (Note 5)
-0.8
-0.8 -0.95
-1.5
V lo = 1.0 mA, IB = 0.1 mA
V lo = 10mA, IB= 1.0mA
V Ic = 50 mA, IB = 5.0 mA
C«
Collector to Base Capacitance
c.b
Emitter to Base Capacitance
3.0 I PF
3.5
PF
Vca = -5.0 V, IE = 0, f = 140 kHz
VEB = -0.5 V, lc = 0, f = 140 kHz
hi.
High Frequency Current Gain
8.5
lc= 10 mA,VcE = -10 V,< = 100MHz
ton
Turn On Time (test circuit no 348)
15
ns lc= 10 mA, IB, = 1.0mA
toff
Turn Off Time (test circuit no 348)
20
ns Ic = 10 mA, IBI = IB2 = 1.0 mA
T,
Charge Storage Time Constant
(test circuit no. 234)
20
ns Ic = 10 mA, IBI = \BI — 10 mA
- SEATING PLANE
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