ST2N5401 Ver la hoja de datos (PDF) - Nanjing International Group Co
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ST2N5401 Datasheet PDF : 3 Pages
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2N5400 / 2N5401
PNP Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier applications.
As complementary types the NPN transistors
ST 2N5550 and ST 2N5551 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Collector Emitter Voltage
ST 2N5400
-VCEO
120
V
ST 2N5401
-VCEO
150
V
Collector Base Voltage
ST 2N5400
-VCBO
130
V
ST 2N5401
-VCBO
160
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
600
mA
Power Dissipation
Ptot
6251)
mW
Junction Temperature
Tj
150
oC
Storage Temperature Range
TS
-55 to +150
oC
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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