2N3772 Ver la hoja de datos (PDF) - Transys Electronics Limited

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componentes Descripción

Fabricante

2N3772

NPN SILICON PLANAR POWER TRANSISTOR

Transys Electronics Limited 

Transys

Electronics

LIMITED

NPN SILICON PLANAR POWER TRANSISTOR

2N3772

TO-3

Metal Can Package

Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector Base Voltage

Collector Emitter Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Peak

Base Current Continuous

Peak

Power Dissipation @ Tc=25ºC

Derate Above 25ºC

Operating And Storage Junction

Temperature Range

SYMBOL

VCBO

VCEO

VCEX

VEBO

IC

IB

PD

Tj, Tstg

VALUE

100

60

80

7

20

30

5

15

150

0.855

- 65 to +200

UNITS

V

V

V

V

A

A

W

W/ºC

ºC

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

0.170

ºC/W

ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)

DESCRIPTION

Collector Emitter Sustaing Voltage

Collector Emitter Sustaing Voltage

Collector Emitter Sustaing Voltage

Collector Cut Off Current

Collector Cut Off Current

SYMBOL

VCEO (sus)*

VCEX (sus)

VCER (sus)

ICEO

ICEV

TEST CONDITION

IC=0.2A, IB=0

IC=0.2A, RBE=100Ω,VEB=(off)=1.5V

IC=0.2A, RBE=100Ω,

VCE=50V, IB=0

VCE=100V, VEB(off)=1.5V

MIN

60

80

70

Tc=150ºC

VCE=45V, VEB(off)=1.5V

Collector Cut Off Current

ICBO

VCB=100V, IE=0

Emitter Cut Off Current

IEBO

VBE=7V, IC=0

DC Current Gain

hFE*

IC=10A, VCE=4V

15

IC=20A, VCE=4V

5

Collector Emitter Saturation Voltage VCE(sat)

IC=10A, IB=1A

IC=20A, IB=4A

Base Emitter On Voltage

VBE(on)

IC=10A, VCE=4V

MAX

10

5.0

UNITS

V

V

V

mA

mA

10

5.0

mA

5.0

mA

60

1.4

V

4.0

2.2

V

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