BT150S-600R Ver la hoja de datos (PDF) - Philips Electronics
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BT150S-600R Datasheet PDF : 6 Pages
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Philips Semiconductors
Thyristors
logic level
Product specification
BT150S series
BT150M series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
Rth j-mb
Rth j-a
Thermal resistance
-
junction to mounting base
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14 -
junction to ambient
TYP.
-
75
MAX. UNIT
3.0 K/W
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID, IR
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
MIN.
-
-
-
-
-
0.1
-
TYP.
15
0.17
0.10
1.23
0.4
0.2
0.1
MAX.
200
10
6
1.8
1.5
-
0.5
UNIT
µA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
tq
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 100 Ω
ITM = 10 A; VD = VDRM(max); IG = 5 mA;
dIG/dt = 0.2 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A;
VR = 10 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
MIN.
-
-
-
TYP.
50
2
100
MAX. UNIT
- V/µs
-
µs
-
µs
October 1997
2
Rev 1.100
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