MBR3060 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MBR3060 Datasheet PDF : 5 Pages
| |||
MBR3060
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1, see Note 3, Mounting Method 3)
Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3)
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(If = 3.0 Amp), TL = 25°C
(If = 3.0 Amp), TL = 100°C
Maximum Instantaneous Reverse Current (Note 2)
(Vr = 60 V), TL = 25°C
(Vr = 60 V), TL = 100°C
1. Lead Temperature reference is cathode lead at printed wiring board.
2. Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0%.
Symbol
RθJL
RθJA
Symbol
Vf
Ir
Max
13
50
Max
0.62
0.59
150
10
Unit
°C/W
°C/W
Unit
V
mA
mA
TYPICAL CHARACTERISTICS
10.00
1.00
150°C
100°C
25°C
75°C
10.00
1.00
150°C
100°C
75°C
25°C
0.10
0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90
Vf, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.10
0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90
Vf, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
100
10
1.0
0.1
0.01
0.001
150°C
100°C
75°C
25°C
1000
f = 1 Mhz
25°C
100
0.0001
0
10
20
30
40
50
Vr, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
10
60
0
10
20
30
40
50
60
Vr, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
http://onsemi.com
2
Share Link: 