BUX84 Ver la hoja de datos (PDF) - Philips Electronics
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BUX84 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUX84; BUX85
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
IBM
Ptot
Tstg
Tj
collector-emitter peak voltage
VBE = 0
BUX84
BUX85
collector-emitter voltage
open base
BUX84
BUX85
collector current (DC)
see Figs 4 and 5
collector current (peak value)
base current (DC)
tp = 2 ms; see Figs 4 and 5
base current (peak value)
base current (reversed; peak value) turn-off current
total power dissipation
storage temperature
Tmb ≤ 25 °C; see Fig.8
junction temperature
MIN.
MAX.
UNIT
−
800
V
−
1 000
V
−
400
V
−
450
V
−
2
A
−
3
A
−
0.75
A
−
1
A
−
−1
A
−
40
W
−65
+150
°C
−
150
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VCEOsust
VCEsat
collector-emitter sustaining voltage
BUX84
BUX85
collector-emitter saturation voltage
VBEsat
ICES
base-emitter saturation voltage
collector-emitter cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
fT
transition frequency
CONDITIONS
MIN.
IC = 100 mA; IBoff = 0;
L = 25 mH; see Figs 2 and 3
400
450
IC = 0.3 A; IB = 30 mA;
−
see Fig.7
IC = 1 A; IB = 200 mA; see Fig.7 −
IC = 1 A; IB = 200 mA; see Fig.9 −
VCEM = VCEMSmax; VBE = 0;
−
note 1
VCEM = VCEMSmax; VBE = 0;
−
Tj = 125 °C; note 1
VEB = 5 V; IC = 0
−
VCE = 5 V; IC = 5 A; see Fig.10 15
VCE = 5 V; IC = 100 mA;
20
see Fig.10
VCE = 10 V; IC = 200 mA;
−
f = 1 MHz
TYP.
−
−
−
−
−
−
−
−
−
50
20
MAX. UNIT
−
V
−
V
0.8 V
1
V
1.1 V
200 µA
1.5 mA
1
mA
−
100
−
MHz
1997 Aug 13
3
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