BUX84 Ver la hoja de datos (PDF) - Inchange Semiconductor
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BUX84 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX84 BUX85
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
BUX84
BUX85
IC=100mA ; IB=0;L=25mH
VCEsat-1 Collector-emitter saturation voltage IC=0.3A ;IB=0.03A
VCEsat-2 Collector-emitter saturation voltage IC=1A ;IB=0.2A
VBEsat
ICES
IEBO
Base-emitter saturation voltage
IC=1A ;IB=0.2A
Collector cut-off current
BUX84
BUX85
VCES=800V; VBE=0
Tj=125℃
VCES=1000V; VBE=0
Tj=125℃
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.2A ;VCE=10V;f=1.0MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A ;VCC=250V
IB1=0.2A;IB2=-0.4A
MIN TYP. MAX UNIT
400
V
450
1.5
V
3.0
V
1.1
V
1.0
1.5
mA
0.2
1.5
1.0
mA
20
100
15
20
MHz
0.2
0.5
μs
2
3.5
μs
0.4
μs
2
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