MJ1000 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
MJ1000 Datasheet PDF : 4 Pages
| |||
MJ900 - MJ901 PNP
MJ1000 -MJ1001 NPN
Symbol
Ratings
Test Condition(s)
Min Typ MX Unit
IEBO
ICER
VC.E(SAT)
Emitter Cutoff Current
i
\ .VBE,=„5.,0,V.d„C., lcn=0
i MJ900
|MJ1000
:
-
MJ901
; MJ1001
VCB=60 V, RBE=1 .0 k ohm
UJjJiQOO -
Collector-Emitter Leakage VCB=80 V, RBE=1.0 k ohm |MJ1Q01
Current
VCB=60 V, RBE=1 .0 k ohm, MJ900
Tc=150°C
MJ1000
i VCB=80 V, RBE=1 .0 k ohm, | MJ901
_
jTc=150°C
|MJ1001
. ! lc=3.0 A, IB=12 mAdc
,C,ol.l.ector-,EA,mitter saturation
I MJ900
MJ1000 -
; DMMJ1?U™U*1
j MJ900
lc=8.0 A, IB=40 mAdc
• Mj901
-
MJ1001
- 2.0 mAdc
-
1.0
mAdc
5.0
_
- 2.0
\/Hn
- 4.0
Symbol
Ratings
VF
Forward Voltage (pulse
method)
Base-Emitter Voltage (*)
VBE
Test Condition(s)
Min Typ MX
|F
i
:l,c=3..0.A.d.C,V.c. E=3,.0„V.d. c.
MJ900
MJ1000
i MJ901
-
i MJ1001
MJ900
MJ1000
|MJ9Q1
-
1.8 -
- 2.5
! MJ1001
MJ900
VCE=3.0 Vdc, lc=3.0 Adc i —•—•?. 1000 -
-
Unit
V
V
FE
H uoP PCiuirrrraenntt bPaaiinn (t*\)
l_!Y:__?_::_r_J, MJQQQ
I VCE=3.0 Vdc, lc=4.0 Adc | JJJJJJ° 750 -
-
IMJ1001
(*) Pulse Width » 300 ^s, Duty Cycle Z 2.0%
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