BAS516 Ver la hoja de datos (PDF) - Diode Semiconductor Korea
Número de pieza
componentes Descripción
Fabricante
BAS516 Datasheet PDF : 4 Pages
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Diode Semiconductor Korea
High Speed Switching Diode
BAS516
Parameter
Symbol
Min. Max.
Unit
0.715
V
Forward voltage
VF
0.855
V
1
V
1.25
V
Reverse current
IR
30
nA
30
μA
1
μA
50
μA
Diode capacitance
Cd
1
pF
Reverse recovery time trr
4
ns
Conditions
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=25V TJ=150℃
VR=75V
VR=75V TJ=150℃
VR=0,f=1MHz
IF=10mA,IR=10mA,RL=1mA
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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