DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AP50G60W-HF Ver la hoja de datos (PDF) - Advanced Power Electronics Corp

Número de pieza
componentes Descripción
Fabricante
AP50G60W-HF
A-POWER
Advanced Power Electronics Corp A-POWER
AP50G60W-HF Datasheet PDF : 3 Pages
1 2 3
AP50G60W-HF
200
T C =25 o C
20V
18V
160
15V
120
12V
80
V GE =10V
40
0
0
10
20
30
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
160
V GE =15V
120
T C =25 o C
80
T C =150 o C
40
0
0
2
4
6
8
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
2
I C = 1mA
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
20
I C =33A
16
V CC =300V
V CC =400V
12
V CC =500V
8
4
0
0
20
40
60
80
Q G , Gate Charge (nC)
Fig 2. Gate Charge Characterisitics
5
V GE = 15 V
4
3
2
I C = 50 A
I C =40A
1
0
40
80
120
160
Junction Temperature ( o C)
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
3000
2000
C ies
1000
-
-
C oes
0
1
5
9
13
17
21
25
C 29
res33
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]