ACE9435B Ver la hoja de datos (PDF) - ACE Technology Co., LTD.
Número de pieza
componentes Descripción
Fabricante
ACE9435B Datasheet PDF : 5 Pages
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ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE9435B XX + H
Halogen - free
Pb - free
FM : SOP-8
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30 -36
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V, VGS=0V
0.02
-1
uA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
±1.5 ±100 nA
On characteristics
Drain-Source On-State Resistance RDS(ON)
VGS=-10V, ID=-4.6A
VGS=-4.5V, ID=-2A
51
60
mΩ
68
82
Gate Threshold Voltage
VGS(th) VDS=VGS, ID=-250uA -1 -1.46
-3
V
Forward Transconductance
gFS
VDS=-5V, ID=-6A
12
S
Switching
Turn-On Delay Time
Td(on)
VDS=-15V,RL=2.5Ω
8.6
ns
Turn-Off Delay Time
td(off)
RGEN=3Ω, VGS=-10V
28.2
Dynamic Characteristics
Input Capacitance
Ciss
550
Output Capacitance
Coss
VDS=-15V, VGS=0V
f=1MHz
60
pF
Reverse Transfer Capacitance
Crss
50
Drain-source diode characteristics and maximum ratings
Diode Forward Voltage
VSD
VGS=0V, IS=-1A
-0.81
V
Note: 1. The value of PD is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based
on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
VER 1.2 2
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