BU508DFI Ver la hoja de datos (PDF) - SavantIC Semiconductor

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componentes Descripción

Fabricante

BU508DFI

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A

VBEsat Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=4.5A ;IB=2A

VCE=1500V, VBE=0

Tj=125

VEB=5.0V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

VF

Diode forward voltage

ts

Storage time

tf

Fall time

IC=0.1A ; VCE=5V

IF=4A

IC=4.5A ; VCC=140V

IB=1.8A; LB=3mH

LC=0.9mH

Product Specification

BU508DFI

MIN TYP. MAX UNIT

700

V

1.0

V

1.3

V

1.0

2.0

mA

300

mA

8

7

MHz

2.0

V

7

µs

0.55

µs

2

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