BU508DF Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU508DF

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH

VCE(sat) Collector-emitter saturation voltage IC=4.5A; IB=1.6A

VBE(sat) Base-emitter saturation voltage

IC=4.5A ;IB=2A

IEBO

Emitter cut-off current

ICES

Collector cut-off current

hFE

DC current gain

VEB=5V; IC=0

VCB=BVCBO IE=0

TC=125℃

IC=0.5A ; VCE=5V

fT

Transition frequency

IC=0.1A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

VF

Diode forward voltage

IF=4.5A

Product Specification

BU508DF

MIN TYP. MAX UNIT

700

V

1.0

V

1.1

V

300

mA

1.0

2.0

mA

10

30

7

MHz

125

pF

1.6

2.0

V

2

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