BU508DF Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
BU508DF Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508DF
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
·With integrated efficiency diode
APPLICATIONS
·For use in horizontal deflection circuits of
colour TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICP
Collector current (Pulse)
IB
Base current (DC)
IBM
Base current (Pulse)
Ptot
Total power dissipation
TC=25℃
Tj
Max.operating junction temperature
Tstg
Storage temperature
VALUE
1500
700
5
8
15
4
6
34
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
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