BU508D Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

BU508D

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

BU508D

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2.0A

VBEsat Base-emitter saturation voltage

IC=4.5A; IB=2.0A

hFE

DC current gain

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=1A ; VCE=5V

VCE=1500V; VBE=0

VEB=5V; IC=0

VF

Diode forward voltage

IF=4.0A

fT

Transition frequency

IC=0.1A ; VCE=5V

Cob

Collector capacitance

IE=0;VCB=10V;f=1MHz

ts

Storage time

tf

Fall time

IC=4.5A ; IB=1.4A

LB=10μH

MIN TYP. MAX UNIT

700

V

1.0

V

1.5

V

8

1.0

mA

300

mA

2.0

V

4

MHz

125

pF

7

μs

1.0

μs

2

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