PUML1-DG-125 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PUML1-DG-125
NXP Semiconductors.
PUML1-DG-125 Datasheet PDF : 12 Pages
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NXP Semiconductors
PUML1/DG
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
103
hFE
102
10
006aaa034
(1)
(2)
(3)
1
VCEsat
(V)
10−1
006aaa035
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
10−2
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 7. TR2: DC current gain as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 8. TR2: Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa036
006aaa037
10
10
VI(on)
(V)
(1)
(2)
1
(3)
VI(off)
(V)
(1)
1
(2)
(3)
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 9. TR2: On-state input voltage as a function of
collector current; typical values
10−1
10−2
10−1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 10. TR2: Off-state input voltage as a function of
collector current; typical values
PUML1_DG_1
Product data sheet
Rev. 01 — 14 July 2008
© NXP B.V. 2008. All rights reserved.
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