PUML1 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
PUML1
NXP Semiconductors.
PUML1 Datasheet PDF : 12 Pages
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NXP Semiconductors
PUML1/DG
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1 (general-purpose transistor)
ICBO
collector-base cut-off
VCB = 60 V; IE = 0 A
current
VCB = 60 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
hFE
DC current gain
VCEsat collector-emitter
saturation voltage
VCE = 2 V; IC = 100 mA
VCE = 10 V; IC = 2 mA
IC = 100 mA; IB = 10 mA
fT
transition frequency
VCE = 10 V; IC = 2 mA;
f = 100 MHz
VCE = 6 V; IC = 10 mA;
f = 100 MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
TR2 (resistor-equipped transistor)
ICBO
collector-base cut-off
VCB = 50 V; IE = 0 A
current
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
current
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 10 mA
R2/R1 bias resistor ratio
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
10 nA
-
-
5
µA
-
-
10 nA
90 -
210 -
-
-
-
340
250 mV
100 -
-
MHz
-
230 -
MHz
-
-
3
pF
-
-
100 nA
-
-
1
µA
-
-
50 µA
-
-
400 µA
30 -
-
-
-
150 mV
-
1.1 0.8 V
2.5 1.8 -
V
7
10 13 kΩ
0.8 1
1.2
-
-
2.5 pF
PUML1_DG_1
Product data sheet
Rev. 01 — 14 July 2008
© NXP B.V. 2008. All rights reserved.
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