PUML1-DG Ver la hoja de datos (PDF) - NXP Semiconductors.

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PUML1-DG

50 V, 200 mA NPN general-purpose transistor/100 mA NPN resistor-equipped transistor

NXP Semiconductors. 

PUML1/DG

50 V, 200 mA NPN general-purpose transistor/

100 mA NPN resistor-equipped transistor

Rev. 01 — 14 July 2008

Product data sheet

1. Product profile

1.1 General description

NPN general-purpose transistor and NPN Resistor-Equipped Transistor (RET) in one

SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.

1.2 Features

I General-purpose transistor:

N 200 mA collector current IC

I Resistor-equipped transistor:

N Built-in bias resistors

I Simplifies circuit design

I Reduces component count

I Reduces pick and place costs

I Very small SMD plastic package

I AEC-Q101 qualified

1.3 Applications

I Inverter and switches

I Low-frequency amplifier

I Driver stages

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

TR1 (general-purpose transistor)

VCEO

IC

hFE

collector-emitter voltage

collector current

DC current gain

TR2 (resistor-equipped transistor)

VCEO

IO

R1

collector-emitter voltage

output current

bias resistor 1 (input)

R2/R1 bias resistor ratio

Conditions

open base

VCE = 10 V;

IC = 2 mA

open base

Min Typ Max Unit

-

-

-

-

210 -

50

V

200 mA

340

-

-

-

-

7

10

0.8 1

50

V

100 mA

13

kΩ

1.2

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