MJ2500 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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componentes Descripción
Fabricante
MJ2500
New Jersey Semiconductor
MJ2500 Datasheet PDF : 2 Pages
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MJ2500 MJ2501 MJ3OOO MJ3OO1
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
|
Characteristic
I Symbol I| Min
OFF CHARACTERISTICS
Collector Emitter Breakdown VoltageO )
(IC = 100 mAdc, IB = O)
MJ2500, MJ3000 V(BR)CEO
60
MJ2501, MJ3001
80
Collector-Emitter Leakage Current
(VEB = 60 Vdc, RBE = 1 .0 k ohm)
(VEB = 80 Vdc, RBE = 1 .0 k ohm)
(VEB =60 Vdc. RBE = 1 .0 k ohm, TC = 1 50°C)
(VEB = 80 Vdc, RBE = 1.0k ohm, TC = 150°C)
Emitter Cutoff Current (VBE = 5.0 Vdc, lc = 0)
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
'CER
MJ2500, MJ3000
M J2501, MJ3001
—
MJ2500, MJ3000
MJ2501, MJ3001
IEBO
_
MJ2500, MJ3000
ICEO
—
MJ2501,MJ3001
ON CHARACTERISTICS(I)
DC Current Gain (Ic = 5.0 Adc, VCE =3-°vdc)
Collector-Emitter Saturation Voltage (lc = 5.0 Adc, IB = 20 mAdc)
(lc = 10 Adc, IB = 50 mAdc)
HFE
1000
vCE(sat)
—
Base Emitter Voltage (lc = 5,0 Adc, VCE = 3.0 Vdc)
(1)PulseTest: Pulse Width < 300 (is, Duty Cycle < 2.0%.
vBE(on)
—
| Max
—
1.0
1.0
5.0
5.0
2.0
1.0
1.0
—
2.0
4.0
3.0
| Unit |
Vdc
mAdc
mAdc
mAdc
—
Vdc
Vdc
A
«•
00.13 (0.005)® |T|~Q ®| Y @
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M. 1982
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY
INCHES
DIM MIN MAX
A
1.55C REF
B
1.050
C 0.250 0.335
D 0.038 0.043
F 0.055 0.070
G
0.430 BSC
H
0.215 BSC
K 0.440 0,480
L
0.665 BSC
N — 0.830
Q 0.151 0.165
U
1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
— 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
21.08
3.84 4.19
30. 15 BSC
3.33 4.77
STYLE 1:
PINT BASE
2. EMITTER
CASE: COLLECTOR
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