MPSA20 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MPSA20

Amplifier Transistor

ON Semiconductor 

MPSA20

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0)

Emitter −Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ON CHARACTERISTICS

DC Current Gain (Note 2)

(IC = 5.0 mAdc, VCE = 10 Vdc)

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product (Note 2)

(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Symbol

V(BR)CEO

V(BR)EBO

ICBO

Min

Max

40

−

4.0

−

−

100

Unit

Vdc

Vdc

nAdc

hFE

VCE(sat)

40

400

−

−

0.25

Vdc

fT

Cobo

125

−

−

4.0

MHz

pF

EQUIVALENT SWITCHING TIME TEST CIRCUITS

300 ns

DUTY CYCLE = 2%

−0.5 V

<1.0 ns

+3.0 V

+10.9 V

275

10 < t1 < 500 ms

DUTY CYCLE = 2%

t1

10 k

0

CS < 4.0 pF*

−9.1 V

+10.9 V

10 k

< 1.0 ns 1N916

+3.0 V

275

CS < 4.0 pF*

Figure 1. Turn−On Time

*Total shunt capacitance of test jig and connectors

Figure 2. Turn−Off Time

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