E13009 Ver la hoja de datos (PDF) - Tiger Electronic
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E13009 Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
Product specification
SWITCHMODE Series NPN Silicon Power Transistors
MJE13009
DESCRIPTION
These devices are designed for high–voltage, high–speed power switching inductive circuits
where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such
as Switching Regulator’s, Inverters, Motor Controls,applications Solenoid/Relay drivers and
Deflection circuits.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l
Value Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
400 V
9
V
12.0 A
6.0 A
110 W
150 oC
-55~150 oC
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICEO VCB=400V, IE=0
Emitter Cut-off Current
IEBO VEB=9V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
VCEO
hFE(1)
hFE(2)
IC=10mA, IB=0
VCE=5V, IC=5.0A
VCE=5V, IC=8.0A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=8.0A,IB=1.6A
IC=12.0A,IB=3.0A
IC=8.0A,IB=1.6A
Current Gain Bandwidth Product
fT
VCE=10V,IC=500mA
Storage Time
TS IB1=IB2=1.6A tp=25us
Min.
—
—
400
8
6
—
—
—
4
—
Typ.
—
—
—
—
—
—
—
—
—
3.5
Max. Unit
1.0 mA
1.0 mA
—
V
40
30
1.5
V
3.0
1.6 V
— MHz
4
us
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