BUL147 Ver la hoja de datos (PDF) - Motorola => Freescale
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BUL147 Datasheet PDF : 10 Pages
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TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
BUL147 BUL147F
180
TJ = 25°C
IB(off) = IC/2
160
TJ = 125°C
VCC = 15 V
VZ = 300 V
IC = 2 A
LC = 200 µH
140
120
100
80
60 IC = 4.5 A
3 456
7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
300
IC = 2 A
IB(off) = IC/2
VCC = 15 V
250
VZ = 300 V
LC = 200 µH
200
150
IC = 4.5 A
100
TJ = 25°C
50
TJ = 125°C
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 14. Inductive Crossover Time
100
DC (BUL147)
5 ms
10
1
DC (BUL147F)
0.1
GUARANTEED SAFE OPERATING AREA INFORMATION
9
8
1 ms
10 µs 1 µs
7
6
EXTENDED
5
SOA
4
3
2
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH
–5 V
0.01
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1
0
VBE(off) = 0 V
–1, 5 V
0 100 200 300 400 500 600 700 800
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
1.0
0.8
SECOND BREAKDOWN
DERATING
0.6
0.4
THERMAL DERATING
0.2
0.0
20
40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 15 is based on TC
= 25°C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25°C. Second breakdown limita-
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Fig-
ure 17. TJ(pk) may be calculated from the data in Figure 20
and 21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction re-
verse–biased. The safe level is specified as a reverse–biased
safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode.
Motorola Bipolar Power Transistor Device Data
3–5
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