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BUL147

POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS

Motorola => Freescale 

BUL147 BUL147F

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)

Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)

VBE(sat)

—

—

Collector–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.2 Adc)

(IC = 4.5 Adc, IB = 0.9 Adc)

VCE(sat)

—

(TC = 125°C)

—

—

(TC = 125°C)

—

DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)

hFE

14

(TC = 125°C)

—

DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)

8.0

(TC = 125°C)

7.0

DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25°C to 125°C)

10

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

10

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

Input Capacitance (VEB = 8.0 V)

Cib

—

Dynamic Saturation Voltage:

Determined 1.0 µs and

3.0 µs respectively after

rising IB1 reaches 90% of

final IB1

(IC = 2.0 Adc

IB1 = 200 mAdc

VCC = 300 V)

1.0 µs

3.0 µs

(TC = 125°C)

(TC = 125°C)

(IC = 5.0 Adc

1.0 µs (TC = 125°C)

VCE(dsat)

—

—

—

—

—

—

(see Figure 18)

IB1 = 0.9 Adc

VCC = 300 V)

3.0 µs (TC = 125°C)

—

—

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–On Time

(IC = 2.0 Adc, IB1 = 0.2 Adc

ton

—

IB2 = 1.0 Adc, VCC = 300 V)

(TC = 125°C)

—

Turn–Off Time

toff

—

(TC = 125°C)

—

Turn–On Time

(IC = 4.5 Adc, IB1 = 0.9 Adc

ton

—

IB1 = 2.25 Adc, VCC = 300 V) (TC = 125°C)

—

Turn–Off Time

toff

—

(TC = 125°C)

—

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

Fall Time

(IC = 2.0 Adc, IB1 = 0.2 Adc

tfi

—

IB2 = 1.0 Adc)

(TC = 125°C)

—

Storage Time

tsi

—

(TC = 125°C)

—

Crossover Time

tc

—

(TC = 125°C)

—

Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc

tfi

—

IB2 = 2.25 Adc)

(TC = 125°C)

—

Storage Time

tsi

—

(TC = 125°C)

—

Crossover Time

tc

—

(TC = 125°C)

—

Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc

tfi

60

IB2 = 0.9 Adc)

(TC = 125°C)

—

Storage Time

tsi

2.6

(TC = 125°C)

—

Crossover Time

tc

—

(TC = 125°C)

—

Typ

0.82

0.92

0.25

0.3

0.35

0.35

—

30

12

11

18

20

14

100

1750

3.0

5.5

0.8

1.4

3.3

8.5

0.4

1.0

200

190

1.0

1.6

85

100

1.5

2.0

100

120

1.3

1.9

210

230

80

100

1.6

2.1

170

200

—

150

—

4.3

200

330

Max

Unit

1.1

Vdc

1.25

Vdc

0.5

0.5

0.7

0.8

34

—

—

—

—

—

—

—

175

2500

—

—

—

—

—

—

—

—

MHz

pF

pF

Volts

350

ns

—

2.5

µs

—

150

ns

—

2.5

µs

—

180

ns

—

2.5

µs

—

350

ns

—

150

ns

—

3.2

µs

—

300

ns

—

180

ns

—

3.8

µs

—

350

ns

—

3–2

Motorola Bipolar Power Transistor Device Data

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