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BUL147 Datasheet PDF : 10 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL147/D
™ Designer's Data Sheet
SWITCHMODE™
NPN Bipolar Power Transistor
For Switching Power Supply Applications
BUL147*
BUL147F*
*Motorola Preferred Device
The BUL147/BUL147F have an applications specific state–of–the–art die designed
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power
supplies for all types of electronic equipment. These high–voltage/high–speed
transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Parametric Distributions are Tight and Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL147F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol BUL147 BUL147F Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
Operating and Storage Temperature
THERMAL CHARACTERISTICS
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
PD
TJ, Tstg
400
700
9.0
8.0
16
4.0
8.0
—
4500
—
3500
—
1500
125
45
1.0
0.36
– 65 to 150
Vdc
Vdc
Vdc
Adc
Adc
Volts
Watts
W/°C
°C
Rating
Symbol BUL44 BUL44F Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
RθJC
RθJA
TL
1.0
2.78
62.5
62.5
260
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
BUL147
CASE 221A–06
TO–220AB
BUL147F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
—
—
100
µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)
ICES
—
—
100
µAdc
—
—
500
—
—
100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
—
—
100
µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
3–1
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