MPS5179 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

MPS5179

NPN RF Transistor

Fairchild Semiconductor 

Typical Characteristics

NPN RF Transistor

(continued)

DC Current Gain

vs Collector Current

25 0

125 ° C

20 0

15 0

25 ° C

10 0

50 VCE= 5V

- 40 °C

0

0. 00 1

0.01

0.1

I C - COLLECTOR CURRE NT (A)

Collector-Emitter Saturation

Voltage vs Collector Current

0.2

β = 10

0.15

0.1

0.05

25 °C

125 °C

- 40 °C

0.1

1

10 20 30

I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation

Voltage vs Collector Current

1.2

1

0.8

0.6

0.4

0.1

- 40 °C

25 °C

125 °C

β = 10

1

10 20 30

I C - COLLE CTOR CURRENT ( mA)

Base-Emitter ON Voltage vs

Collector Current

1

0.8

- 40 °C

0.6

0.4

25 °C

125 °C

VCE = 5V

0.2

0.01

0.1

1

10

50

I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current

vs Ambient Temperature

100

V = 20V

CB

10

1

0.1

25

50

75

100

125

150

TA - AMBIENT TE MPERATURE (°C)

Power Dissipation vs

Ambient Temperature

625

TO-92

500

375 SOT-23

250

125

0

0

25

50

75

100

125

150

TEMPERATURE (o C)

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