MPS5179 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MPS5179 Datasheet PDF : 12 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
OFF CHARACTERISTICS
VCEO(sus)
V(BR)CBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IC = 3.0 mA, IB = 0
IC = 1.0 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 15 V, IE = 0
VCB = 15 V, TA = 150°C
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 3.0 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Ccb
Collector-Base Capacitance
hfe
Small-Signal Current Gain
rb’Cc
Collector Base Time Constant
NF
Noise Figure
FUNCTIONAL TEST
Gpe
Amplifier Power Gain
PO
Power Output
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IC = 5.0 mA, VCE = 6.0 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 0.1 to 1.0 MHz
IC = 2.0 mA, VCE = 6.0 V,
f = 1.0 kHz
IC = 2.0 mA, VCB = 6.0 V,
f = 31.9 MHz
IC = 1.5 mA, VCE = 6.0 V,
RS = 50Ω, f = 200 MHz
VCE = 6.0 V, IC = 5.0 mA,
f = 200 MHz
VCB = 10 V, IE = 12 mA,
f ≥ 500 MHz
NPN RF Transistor
(continued)
Min Max Units
12
V
20
V
2.5
V
0.02
µA
1.0
µA
25
250
0.4
V
1.0
V
900
2000
MHz
1.0
pF
25
300
3.0
14
ps
5.0
dB
3
15
dB
20
mW
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)
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