BUV20 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BUV20 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Collector - Emitter Sustaining lc =250mA
IB = 0
VcEotsusr Vo|tage
L = 25mH
125
V(BR)EBO Emitter - BaseVoltage
Collector Emitter Saturation
IE = 50mA
lc = 25A
7
VCE = 2-5A
VcE<sat>* Voltage
lc = 50A
IB = 5A
Base Emitter Saturation
VBE<sat>* Voltage
lc = 50A
IB=5A
ICEO
Collector Cut-off Current
VCE=100V
IB=0
'CEX
Collector Cut-off Current
VCE = VCEX
VBE = -1.5V
TC=125°C
IEBO
Emitter Cut-off Current
lc = 0
VEB = 5V
hpE*
DC Current Gain
VCE = 2V
VCE = 4V
lc = 25A
20
lc = 50A
10
fT
Transition Frequency
IC = 2A VCE = 15V f = 100MHz
8
ton
Turn-On Time
lc = 50A
IB=5A
ts
Storage Time
lc = 50A
IB1 -IB2 =5A
tr
Fall Time
lc = 50A
IB1 =-!B2 =5A
Typ.
0.3
0.7
1.4
Max. Unit
0.6
V
1.2
2
3
3
mA
12
1
60
—
MHz
1.5
1.2
US
0.3
NOTES
* Pulse Test: tp = SOOus, 8 <, 2%
MECHANICAL DATA
Dimensions in mm(inches)
TO-3
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A
1.530REF
38.86 REF
B 0.990 1.050 25.15 26.67
C 0.250 0.335 6.35
8.51
D 0.057 0.063 1.45
1.60
E 0.060 0.070 1.53
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K 0.440 0.480 11.18 12.19
L
0.665 BSC
16.89 BSC
N 0.760 0.630 19.31 2108
q 0.151 0,165
3.84
4.19
u
1.187 BSC
30.15 BSC
V 0.131 I 0.188 3.33
4.77
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