DTC114ECA Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

DTC114ECA

NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

DTC114ECA

　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCC

50

V

VIN

-10 to 40

V

IO

50

mA

IC(MAX)*1

100

mA

PD*2

200

mW

PD*3

350

mW

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

VI(off)

VI(on)

VO(on)

II

IO(off)

GI

R1

R2/R1

VCC = 5V, IO = 100μA

VO = 0.3V, IO = 10mA

IO / II = 10mA / 0.5mA

VI = 5V

VCC = 50V, VI = 0V

VO = 5V, IO = 5mA

-

-

f

*1

T

VCE = 10V, IE = -5mA,

f = 100MHz

*1 Characteristics of built-in transistor.

*2 Each terminal mounted on a reference land.

*3 Mounted on a ceramic board(7.0×5.0×0.6mm).

Values

Unit

Min. Typ. Max.

-

- 0.5

V

3.0 -

-

- 100 300 mV

-

- 880 μA

-

- 500 nA

30 -

-

-

7 10 13 kΩ

0.8 1.0 1.2 -

- 250 - MHz

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

www.rohm.com

© 2015 ROHM Co., Ltd. All rights reserved.

2/5

　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

20150817 - Rev.001

Share Link: