DTC114E Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

DTC114E

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTC114E

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

50

V

Input Voltage

VIN

-10 ~ +40

V

Output Current

IOUT

100

mA

SOT-23/SOT-323

200

SOT-523

Power Dissipation

TO-92

PD

150

mW

625

TO-92SP

550

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Input Voltage

VIN(OFF)

VIN(ON)

VCC =5V, IOUT =100μA

VOUT =0.3V, IOUT =10mA

0.5 V

3

V

Output Voltage

VOUT(ON) IOUT/IIN =10mA/0.5mA

0.1 0.3 V

Input Current

IIN

VIN=5V

0.88 mA

Output Current

IOUT(OFF) VCC =50V, VIN =0V

0.5 μA

DC Current Gain

hFE

VOUT =5V, IOUT =5mA

30

Input Resistance

R1

7

10 13 KΩ

Resistor Ratio

R2/R1

0.8 1 1.2

Transition Frequency

fT

VCE =10V, IE =−5mA, f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-047,H

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