2N2907 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
2N2907 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistors
Product specification
2N2907; 2N2907A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
3
2
MAM263
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
collector-base voltage
collector-emitter voltage
2N2907
2N2907A
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
toff
turn-off time
CONDITIONS
MIN.
open emitter
−
open base
−
−
−
Tamb ≤ 25 °C
−
IC = −150 mA; VCE = −10 V
100
IC = −50 mA; VCE = −20 V; f = 100 MHz
200
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA −
MAX. UNIT
−60
V
−40
−60
−600
400
300
−
300
V
V
mA
mW
MHz
ns
1997 May 30
2
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