DTA115TUA Ver la hoja de datos (PDF) - ROHM Semiconductor

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DTA115TUA

PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

ROHM Semiconductor 

DTA115T series

　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

DTA115TM

DTA115TUA

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCBO

-50

V

VCEO

-50

V

VEBO

-5

V

IC*1

-100

mA

150

PD*2

mW

200

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Collector-base breakdown

voltage

BVCBO IC = -50μA

Collector-emitter breakdown

voltage

BVCEO IC = -1mA

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Input resistance

BVEBO

ICBO

IEBO

VCE(sat)

hFE

R1

IE = -50μA

VCB = -50V

VEB = -4V

IC = -1mA, IB = -0.1mA

VCE = -5V, IC = -1mA

-

Transition frequency

f

*1

T

VCE = -10V, IE = 5mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land.

Values

Unit

Min. Typ. Max.

-50 -

-

V

-50 -

-

V

-5

-

-

V

-

- -500 nA

-

- -500 nA

-

- -300 mV

100 250 600 -

70 100 130 kΩ

- 250 - MHz

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20160403 - Rev.002

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