2N6057 Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N6057 Datasheet PDF : 3 Pages
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NPN 2N6057 – 2N6058 – 2N6059
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
VCE= VCEX =60 V, VBE=-1.5 V 2N6050 -
VCE= VCEX =80 V, VBE=-1.5 V 2N6051 -
VCE= VCEX =100 V
VBE=-1.5 V
2N6052 -
ICEX
Collector Cutoff
Current
VCE= VCEX =60 V, VBE=-1.5 V
TC=150°C
2N6050
-
VCE= VCEX =80 V, VBE=-1.5 V
TC=150°C
2N6051
-
VCE= VCEX =100 V
VBE=-1.5 V, TC=150°C
ICEO
Collector Cutoff
Current
VCE=30 Vdc, IB=0
VCE=40 Vdc, IB=0
VCE=50 Vdc, IB=0
IEBO
Emitter Cutoff
Current
VEB=5 V
2N6052 -
2N6050 -
2N6051 -
2N6052 -
2N6050 -
2N6051 -
2N6052 -
Collector-Emitter
2N6050 60
VCEO(SUS) Sustaining Voltage IC=0.1 A
(*)
2N6051 80
2N6052 100
2N6050
VCE(SAT)
Collector-Emitter
saturation Voltage
(*)
IC=6 A, IB=24 mA
IC=12 A, IB=120 mA
2N6051 -
2N6052
2N6050
2N6051 -
2N6052
Base-Emitter
2N6050
VBE(SAT)
Saturation Voltage IC=12 A, IB=120 mA
(*)
2N6051 -
2N6052
VBE(ON)
Base-Emitter
Voltage (*)
IC=6 A, VCE=3 V
2N6050
2N6051 -
2N6052
fT
Transition
Frequency
2N6050
IC=5 A, VCE=3 V, f=1 MHz 2N6051 4
2N6052
2N6050
VCE=3 V, IC=6.0 A
hFE
DC Current Gain
(*)
2N6051 750
2N6052
2N6050
VCE=3.0 V, IC=12 A
2N6051 100
2N6052
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
17/10/2012
COMSET SEMICONDUCTORS
-
- 500 µA
-
-
-
5 mA
-
-
- 1.0 mA
-
-
- 2.0 mA
-
-
-
-
-
V
-
-
- 2.0
V
- 3.0
-
4
V
- 2.8 V
-
- MHz
- 18000 -
-
-
2|3
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