MMBT2907 Ver la hoja de datos (PDF) - Nanjing International Group Co

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componentes Descripción

Fabricante

MMBT2907

PNP Silicon Epitaxial Planar Transistor

Nanjing International Group Co 

MMBT2907 / MMBT2907A

PNP Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into one group

according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

-VCBO

60

V

MMBT2907

MMBT2907A

-VCEO

40

60

V

-VEBO

5

V

Collector Current

Power Dissipation

Junction Temperature

-IC

600

mA

Ptot

350

mW

Tj

150

OC

Storage Temperature Range

Tstg

- 55 to + 150

OC

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