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BUW13F Datasheet PDF : 16 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13F; BUW13AF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCEOsust
VCEsat
VBEsat
ICsat
ICES
IEBO
hFE
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
BUW13F
L = 25 mH; see Figs 6 and 7 400
BUW13AF
450
collector-emitter saturation voltage
BUW13F
IC = 10 A; IB = 2 A; see
−
Figs 8 and 10
BUW13AF
IC = 8 A; IB = 1.6 A; see
−
Figs 8 and 10
base-emitter saturation voltage
BUW13F
BUW13AF
IC = 10 A; IB = 2 A; see Fig.8 −
IC = 8 A; IB = 1.6 A;
−
see Fig.8
collector saturation current
VCE = 1.5 V
BUW13F
−
BUW13AF
−
collector-emitter cut-off current
VCE = VCESMmax; VBE = 0;
−
note 1
emitter-base cut-off current
DC current gain
VCE = VCESMmax; VBE = 0;
−
Tj = 125 °C; note 1
VEB = 9 V; IC = 0
−
VCE = 5 V; IC = 20 mA;
10
see Fig.11
VCE = 5 V; IC = 1.5 A;
10
see Fig.11
Switching times resistive load (see Figs 12 and 13)
ton
turn-on time
BUW13F
BUW13AF
ts
storage time
BUW13F
BUW13AF
tf
fall time
BUW13F
BUW13AF
ICon = 10 A; IBon = IBoff = 2 A −
ICon = 8 A; IBon = IBoff = 1.6 A −
ICon = 10 A; IBon = IBoff = 2 A −
ICon = 8 A; IBon = IBoff = 1.6 A −
ICon = 10 A; IBon = IBoff = 2 A −
ICon = 8 A; IBon = IBoff = 1.6 A −
Switching times inductive load (see Figs 14 and 15)
ts
storage time
BUW13F
BUW13AF
ICon = 10 A; IB = 2 A;
−
VCL = 250 V; Tc = 100 °C
ICon = 8 A; IB = 1.6 A;
−
VCL = 300 V; Tc = 100 °C
TYP.
−
−
−
−
−
−
−
−
−
−
−
18
20
−
−
−
−
−
−
2.8
2.8
MAX. UNIT
−
V
−
V
1.5
V
1.5
V
1.6
V
1.6
V
10
A
8
A
1
mA
4
mA
10
mA
35
35
1
µs
1
µs
4
µs
4
µs
0.8
µs
0.8
µs
3.5
µs
3.5
µs
1997 Aug 13
4
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