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AD8397 Ver la hoja de datos (PDF) - Analog Devices

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AD8397 Datasheet PDF : 16 Pages
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ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Supply Voltage
Power Dissipation1
Storage Temperature
Operating Temperature Range
Lead Temperature Range
(Soldering 10 sec)
Junction Temperature
Rating
26.4 V
See Figure 4
−65°C to +125°C
−40°C to +85°C
300°C
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational sec-
tion of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1 Thermal resistance for standard JEDEC 4-layer board:
8-lead SOIC: θJA = 157.6°C/W
8-Lead SOIC EPAD: θJA = 47.2°C/W
AD8397
MAXIMUM POWER DISSIPATION
The maximum power that can be dissipated safely by
the AD8397 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit may cause a shift in
parametric performance due to a change in the stresses
exerted on the die by the package.
4.5
TJ = 150°C
4.0
3.5
8-LEAD SOIC EPAD
3.0
2.5
2.0
1.5
8-LEAD SOIC
1.0
0.5
0
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec-
trostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation
or loss of functionality.
Rev. 0 | Page 7 of 16

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