MJD122 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MJD122 Datasheet PDF : 8 Pages
| |||
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
VCEO(sus)
100
ICEO
−
ICBO
−
IEBO
−
Vdc
−
mAdc
10
mAdc
10
mAdc
2
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 8 Adc, VCE = 4 Vdc)
hFE
−
1000
12,000
100
−
Collector−Emitter Saturation Voltage
(IC = 4 Adc, IB = 16 mAdc)
(IC = 8 Adc, IB = 80 mAdc)
VCE(sat)
−
−
Vdc
2
4
Base−Emitter Saturation Voltage (Note 2)
(IC = 8 Adc, IB = 80 mAdc)
Base−Emitter On Voltage
(IC = 4 Adc, VCE = 4 Vdc)
VBE(sat)
−
VBE(on)
−
Vdc
4.5
Vdc
2.8
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD127, NJVMJD127
MJD122, NJVMJD122
|hfe|
4
MHz
−
Cob
pF
−
300
−
200
Small−Signal Current Gain
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
−
300
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TA TC
2.5 25
2 20
1.5 15
1 10
0.5 5
TC
TA
SURFACE
MOUNT
00
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
www.onsemi.com
3
Share Link: 