MJD122 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MJD122 Datasheet PDF : 8 Pages
| |||
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
VCEO
100
Vdc
VCB
100
Vdc
VEB
5
Vdc
IC
Adc
8
16
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
IB
120
mAdc
PD
W
20
W/°C
0.16
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.75
W
0.014
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case
RqJC
6.25
Thermal Resistance, Junction−to−Ambient (Note1)
RqJA
71.4
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Unit
°C/W
°C/W
www.onsemi.com
2
Share Link: 