MJD122 Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

MJD122

Complementary Darlington Power Transistor

ON Semiconductor 

MJD122, NJVMJD122

(NPN), MJD127,

NJVMJD127 (PNP)

Complementary Darlington

Power Transistor

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

♦ Human Body Model, 3B > 8000 V

♦ Machine Model, C > 400 V

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

www.onsemi.com

SILICON

POWER TRANSISTOR

8 AMPERES

100 VOLTS, 20 WATTS

DPAK

CASE 369C

STYLE 1

COLLECTOR 2, 4

BASE

1

EMITTER 3

MARKING DIAGRAM

AYWW

J12xG

A = Assembly Location

Y = Year

WW = Work Week

x = 2 or 7

G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

© Semiconductor Components Industries, LLC, 2013

1

September, 2016 − Rev. 15

Publication Order Number:

MJD122/D

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