MMBTA13 Ver la hoja de datos (PDF) - MAKO SEMICONDUCTOR CO.,LIMITED

Número de pieza

componentes Descripción

Fabricante

MMBTA13

Plastic-Encapsulate Transistors

MAKO SEMICONDUCTOR CO.,LIMITED 

Plastic-Encapsulate Transistors

FEATURES

• Darlington Amplifier

MMBTA13/14 (NPN)

Marking:

MMBTA13 :K2D

MMBTA14 :K3D

Maximum Ratings (Ta=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

Storage Temperature

Thermal Resistance Junction to Ambient

unless otherwise noted)

Symbol

Value

VCBO

30

VCEO

30

VEBO

10

IC

0.3

PC

0.3

TJ

150

Tstg

-55to +150

RθJA

417

Unit

V

V

V

A

W

/W

1. BASE

2. EMITTER

3. COLLECTO

SOT-23

ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Min Max

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector-emitter breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

VCBO

IC= 100μA, IE=0

30

VCEO

IC= 100uA, IB=0

30

VEBO

IE= 100μA, IC=0

10

ICBO*

VCB=30 V , IE=0

0.1

IEBO*

hFE(1) *

VEB= 10V , IC=0

VCE=5V, IC= 10mA

0.1

MMBTA13 5000

MMBTA14 10000

hFE(2) *

VCE=5V, IC= 100mA

MMBTA13 10000

MMBTA14 20000

VCE (sat)*

IC=100mA, IB=0.1mA

1.5

VBE (sat) * IC=100mA, IB=0.1mA

2

VBE *

fT

VCE=5V,IC= 100mA

2.0

VCE=5V, IC= 10mA ,f=100MHz

125

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

12

* Pulse Test : pulse width≤300μs,duty cycle≤2%.

Unit

V

V

V

μA

μA

V

V

V

MHz

pF

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

Page:P2-P1

Share Link: