MMBTA55 Ver la hoja de datos (PDF) - Diotec Semiconductor Germany
Número de pieza
componentes Descripción
Fabricante
MMBTA55 Datasheet PDF : 2 Pages
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MMBTA55 ... MMBTA56
Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 60 V, (E open)
- VCB = 80 V, (E open)
MMBTA55
MMBTA56
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VEB = 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- IC = 100 mA, - VCE = 1 V, f = 100 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
- ICBO
- ICBO
- IEB0
fT
RthA
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
100 nA
–
–
100 nA
–
–
100 nA
50 MHz
–
–
< 420 K/W 1)
MMBTA05, MMBTA06
MMBTA55 = 2H
MMBTA56 = 2G(M)
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50
100
150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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