BC856(2008) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BC856
(Rev.:2008)

PNP Silicon AF Transistor

Infineon Technologies 

BC856...-BC860...

Transition frequency fT = ƒ(IC)

VCE = 5 V

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

10 3

MHz

fT 5

EHP00378

10 2

5

10 1

10 -1

5 10 0

5 101

mA 10 2

ΙC

Total power dissipation Ptot = ƒ(TS)

BC856-BC860

12

pF

10

9

8

7

6

5

4

CEB

3

2

1

CCB

0

0

4

8

12

16 V 22

VCB(VEB)

Total power dissipation Ptot = ƒ(TS)

BC857BF, BC858BF

360

mW

300

270

240

210

180

150

120

90

60

30

0

0 15 30 45 60 75 90 105 120 °C 150

TS

300

mW

250

225

200

175

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120 °C 150

TS

7

2008-04-29

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