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BC859 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
BC859
NXP
NXP Semiconductors. NXP
BC859 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859; BC860
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BC859
BC860
collector-emitter voltage
BC859
BC860
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
30
V
50
V
30
V
45
V
5
V
100
mA
200
mA
200
mA
250
mW
65
+150
°C
150
°C
65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Jan 16
3

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