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PMBT3946VPN

40 V, 200 mA NPN/PNP switching transistor

NXP Semiconductors. 

NXP Semiconductors

PMBT3946VPN

40 V, 200 mA NPN/PNP switching transistor

Table 8. Characteristics …continued

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Ce

emitter capacitance VEB = −500 mV;

IC = ic = 0 A; f = 1 MHz

fT

transition frequency VCE = −20 V;

IC = −10 mA;

f = 100 MHz

NF

noise figure

VCE = −5 V;

IC = −100 µA; RS = 1 kΩ;

f = 10 Hz to 15.7 kHz

Min Typ Max Unit

-

-

10

pF

250 -

-

MHz

-

-

4

dB

600

hFE

400

(1)

200

(2)

(3)

006aab115

0.20

IC

(A)

0.15

0.10

0.05

IB (mA) = 5.0

4.0

3.0

2.0

1.0

006aab116

4.5

3.5

2.5

1.5

0.5

0

10−1

1

10

102

103

IC (mA)

VCE = 1 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 3. TR1 (NPN): DC current gain as a function of

collector current; typical values

0.0

0

2

4

6

8

10

VCE (V)

Tamb = 25 °C

Fig 4. TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

PMBT3946VPN_1

Product data sheet

Rev. 01 — 31 August 2009

© NXP B.V. 2009. All rights reserved.

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