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PMBT3946VPN Datasheet PDF : 15 Pages
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NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
td
delay time
tr
rise time
ton
turn-on time
VCC = 3 V; IC = 10 mA;
IBon = 1 mA;
IBoff = −1 mA
ts
storage time
tf
fall time
toff
turn-off time
Cc
collector capacitance VCB = 5 V; IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = 500 mV;
IC = ic = 0 A; f = 1 MHz
fT
transition frequency VCE = 20 V; IC = 10 mA;
f = 100 MHz
NF
noise figure
VCE = 5 V; IC = 100 µA;
RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
TR2 (PNP)
ICBO
collector-base cut-off VCB = −30 V; IE = 0 A
current
IEBO
emitter-base cut-off VEB = −6 V; IC = 0 A
current
hFE
VCEsat
VBEsat
td
tr
ton
ts
tf
toff
Cc
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time
rise time
turn-on time
storage time
VCE = −1 V
IC = −0.1 mA
IC = −1 mA
IC = −10 mA
IC = −50 mA
IC = −100 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
VCC = −3 V;
IC = −10 mA;
IBon = −1 mA;
IBoff = 1 mA
fall time
turn-off time
collector capacitance VCB = −5 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
35
ns
-
-
35
ns
-
-
70
ns
-
-
200 ns
-
-
50
ns
-
-
250 ns
-
-
4
pF
-
-
8
pF
300 -
-
MHz
-
-
5
dB
-
-
−50 nA
-
-
−50 nA
60
180 -
80
180 -
100 180 300
60
130 -
30
50
-
-
−100 −250 mV
-
−165 −400 mV
-
−750 −850 mV
-
−850 −950 mV
-
-
35
ns
-
-
35
ns
-
-
70
ns
-
-
225 ns
-
-
75
ns
-
-
300 ns
-
-
4.5 pF
PMBT3946VPN_1
Product data sheet
Rev. 01 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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