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PMBT3946VPN

40 V, 200 mA NPN/PNP switching transistor

NXP Semiconductors. 

NXP Semiconductors

PMBT3946VPN

40 V, 200 mA NPN/PNP switching transistor

103

Zth(j-a)

(K/W)

102

10

duty cycle =

1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

006aab605

1

10−5

10−4

10−3

10−2

10−1

1

10

102

103

tp (s)

Fig 2.

FR4 PCB, standard footprint

Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

7. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

TR1 (NPN)

ICBO

collector-base cut-off VCB = 30 V; IE = 0 A

current

IEBO

emitter-base cut-off VEB = 6 V; IC = 0 A

current

hFE

VCEsat

VBEsat

DC current gain

collector-emitter

saturation voltage

base-emitter

saturation voltage

VCE = 1 V

IC = 0.1 mA

IC = 1 mA

IC = 10 mA

IC = 50 mA

IC = 100 mA

IC = 10 mA; IB = 1 mA

IC = 50 mA; IB = 5 mA

IC = 10 mA; IB = 1 mA

IC = 50 mA; IB = 5 mA

Min Typ Max Unit

-

-

50

nA

-

-

50

nA

60

180 -

80

180 -

100 180 300

60

105 -

30

50

-

-

75

200 mV

-

120 300 mV

650 750 850 mV

-

850 950 mV

PMBT3946VPN_1

Product data sheet

Rev. 01 — 31 August 2009

© NXP B.V. 2009. All rights reserved.

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