NXP Semiconductors
8. Test information
PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
Fig 8.
VI = 5 V; t = 600 µs; tp = 10 µs; tr = tf ≤ 3 ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω
VBB = 1.9 V; VCC = −3 V
Oscilloscope: input impedance Zi = 50 Ω
Test circuit for switching times
mgd624
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.7
1.5
6
5
1.7 1.3
1.5 1.1
pin 1 index
0.6
0.5
4
0.3
0.1
1
2
0.5
1
Dimensions in mm
Fig 9. Package outline SOT666
3
0.27
0.17
0.18
0.08
04-11-08
PMBT3906VS_1
Product data sheet
Rev. 01 — 20 August 2009
© NXP B.V. 2009. All rights reserved.
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