PMBT3906VS Ver la hoja de datos (PDF) - NXP Semiconductors.
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PMBT3906VS Datasheet PDF : 11 Pages
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NXP Semiconductors
PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
−1.2
VBE
(V)
−1.0
−0.8
−0.6
−0.4
006aab123
(1)
(2)
(3)
−1.2
VBEsat
(V)
−1.0
−0.8
−0.6
−0.4
006aab124
(1)
(2)
(3)
−0.2
−10−1
−1
−10
−102
−103
IC (mA)
−0.2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −1 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5.
Per transistor:
Base-emitter voltage as a function of collector
current; typical values
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6.
Per transistor:
Base-emitter saturation voltage as a function
of collector current; typical values
−1
006aab122
VCEsat
(V)
(1)
−10−1
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values
PMBT3906VS_1
Product data sheet
Rev. 01 — 20 August 2009
© NXP B.V. 2009. All rights reserved.
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