PMBT3906VS Ver la hoja de datos (PDF) - NXP Semiconductors.
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PMBT3906VS Datasheet PDF : 11 Pages
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NXP Semiconductors
PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Simplified outline Graphic symbol
654
654
TR2
TR1
123
123
sym018
3. Ordering information
Table 4. Ordering information
Type number
Package
Name Description
PMBT3906VS
-
plastic surface-mounted package; 6 leads
Version
SOT666
4. Marking
Table 5. Marking codes
Type number
PMBT3906VS
Marking code
ZD
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IC
ICM
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
IBM
peak base current
Ptot
total power dissipation
Per device
open emitter
open base
open collector
single pulse;
tp ≤ 1 ms
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
-
-
-
-
-
-
[1][2] -
Ptot
total power dissipation
Tamb ≤ 25 °C [1][2] -
Max Unit
−40
V
−40
V
−6
V
−200 mA
−200 mA
−100 mA
240
mW
360
mW
PMBT3906VS_1
Product data sheet
Rev. 01 — 20 August 2009
© NXP B.V. 2009. All rights reserved.
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