ST2N5551 Ver la hoja de datos (PDF) - Nanjing International Group Co
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ST2N5551 Datasheet PDF : 3 Pages
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2N5550 / 2N5551
NPN Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier
applications.
As complementary types the PNP transistors
ST 2N5400 and ST 2N5401 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Emitter Voltage
ST 2N5550
VCEO
140
V
ST 2N5551
VCEO
160
V
Collector Base Voltage
ST 2N5550
VCBO
160
V
ST 2N5551
VCBO
180
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Power Dissipation
Ptot
625 1)
mW
Junction Temperature
Tj
150
oC
Storage Temperature Range
TS
- 55 to + 150
oC
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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